C. P. Jarrett, A. R. Brown, R. F. Friend, M. G. Harrison, D. M. de Leeuw, P. Herwig and K.Müllen.
Synthetic Metals 85 (1994) p1403-1404 .
metal-oxide-semiconductor (MOS) structures
Precursor-route pentacene thin film transistor characteristics are presented. The device temperature dependence is reported and the results discussed in terms of a distribution of mobilities. Voltage modulation spectroscopy is also reported and features discussed.
If you cannot find any of these papers, drop me a line for a reprint...
Mark Harrison email@example.com, Marburg, May 3, 1998